Samsung Takes the Lead with Revolutionary HBM4E Memory Samples

Samsung Electronics has begun shipping the first 12-layer HBM4E memory samples, outperforming SK Hynix in the AI chip race. The HBM4E boasts a stable speed of 14 Gbps, scaling to 16 Gbps, with 3.6 TB/s bandwidth and 48 GB capacity. Samsung plans to expand the lineup based on customer needs, emphasizing energy efficiency improvements. Mass production depends on customer schedules.